data sheet silicon transistor 2sc4095 microwave low noise amplifier npn silicon epitaxial transistor 4 pins mini mold data sheet document no. p10367ej2v1ds00 (2nd edition) date published march 1997 n printed in japan 1987 ? description the 2sc4095 is an npn epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from vhf band to uhf band. 2sc4095 features excellent power gain with very low-noise figures. 2sc4095 employs direct nitiride passivated base surface process (dnp process) which is an nec proprietary new fabrication technique which provides excellent noise figures at high current values. this allows excellent associated gain and very wide dynamic range. features ? nf = 1.8 db typ. @ f = 2.0 ghz, v ce = 6 v, i c = 5 ma ? s 21e 2 = 9.5 db typ. @ f = 2.0 ghz, v ce = 6 v, i c = 10 ma absolute maximum ratings (t a = 25 c) collector to base voltage v cbo 20 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 1.5 v collector current i c 35 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperature t stg 65 to +150 c electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions collector cutoff current i cbo 1.0 av cb = 10 v, i e = 0 emitter cutoff current i ebo 1.0 av eb = 1 v, i c = 0 dc current gain h fe 50 100 250 v ce = 6 v, i c = 10 ma gain bandwidth product f t 10 ghz v ce = 6 v, i c = 10 ma f = 1.0 ghz feed-back capacitance c re 0.25 0.8 pf v cb = 10 v, i e = 0, f = 1.0 mhz insertion power gain s 21e 2 7.5 9.5 db v ce = 6 v, i c = 10 ma, f = 2.0 ghz maximum available gain mag 12 db v ce = 6 v, i c = 10 ma, f = 2.0 ghz noise figure nf 1.8 3.0 db v ce = 6 v, i c = 5 ma, f = 2.0 ghz h fe classification class r46/rdf * r47/rdg * r48/rdh * marking r46 r47 r48 h fe 50 to 100 80 to 160 125 to 250 * old specification / new specification package dimensions (units: mm) pin connections 1. 2. 3. 4. collector emitter base emitter 5 5 5 5 0 to 0.1 0.8 2.90.2 (1.8) (1.9) 0.95 0.85 1.1 +0.2 - 0.1 0.16 +0.1 - 0.06 0.4 4 1 3 2 +0.1 - 0.05 2.8 +0.2 - 0.3 1.5 +0.2 - 0.1 0.6 +0.1 - 0.05 0.4 +0.1 - 0.05 0.4 +0.1 - 0.05
2 2sc4095 typical characteristics (t a = 25 c) total power dissipation vs. ambient temperature 200 100 0 10 20 50 100 200 50 1 5 10 50 0.5 100 150 t a -ambient temperature- c i c -collector current-ma dc current gain vs. collector current p t -total power dissipation-mw h fe -dc current gain v ce = 6 v i c -collector current-ma insertion gain vs. collector current |s 21e | 2 -insertion gain-db 0.06 0.2 0.1 1 1.0 12 51020 v cb -collector to base voltage-v feed-back capacitance vs. collector to base voltage c re -feed-back capacitance-pf f = 1.0 ghz 0 2 4 6 10 12 14 16 18 8 0.2 1 0.5 2 5 10 20 30 0 10 20 30 0.1 0.2 0.5 1.0 2.0 3.0 f-frequency-ghz maximum available gain, insertion gain vs. frequency |s 21e | 2 -insetion gain -db mag-maximum available gain-db v ce = 6 v f c = 10 ma 5 2 10 30 20 12 5102030 i c -collector current-ma gain bandwidth produut vs. collector current f t -gain bandwidth product-mhz v ce = 6 v free air |s 21e | 2 mag v ce = 6 v f = 1.0 ghz f = 2.0 ghz 0.5
3 2sc4095 0 2 1 5 4 3 7 6 0.5 1 5 10 50 70 i c -collector current-ma noise figure vs. collector current nf-noise figure-db v ce = 10 v f = 2.0 ghz s-parameter v ce = 6.0 v, i c = 3.0 ma, z o = 50 f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 400 600 800 1000 1200 1400 1600 1800 2000 0.870 0.747 0.628 0.516 0.400 0.327 0.262 0.231 0.205 0.196 24.2 44.6 59.8 75.1 87.7 103.4 118.7 135.5 155.3 170.6 9.193 7.780 7.058 5.675 5.180 4.269 3.950 3.406 3.290 2.867 155.6 136.6 122.1 109.4 99.6 89.8 81.7 74.0 66.4 60.8 0.031 0.040 0.064 0.066 0.090 0.084 0.106 0.105 0.126 0.124 53.6 66.2 54.7 56.0 49.4 47.9 48.5 42.1 46.4 40.9 0.946 0.876 0.816 0.743 0.689 0.654 0.604 0.581 0.548 0.529 12.8 20.7 26.4 30.9 33.0 35.7 37.7 41.5 43.9 47.1 v ce 6.0 v, i c = 10.0 ma, z o = 50 f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 400 600 800 1000 1200 1400 1600 1800 2000 0.671 0.458 0.319 .0239 0.172 0.149 0.131 0.132 0.150 0.163 43.5 68.7 83.7 101.9 119.3 141.4 163.0 179.6 160.0 150.1 18.685 12.702 9.895 7.275 6.261 5.038 4.597 3.927 3.743 3.233 137.9 115.2 102.8 92.3 85.1 77.4 71.0 64.8 58.8 54.5 0.023 0.029 0.046 0.049 0.067 0.070 0.088 0.094 0.113 0.115 52.1 62.2 54.4 63.1 58.6 57.9 56.1 54.0 55.3 50.0 0.832 0.710 0.649 0.600 0.578 0.559 0.527 0.514 0.494 0.478 19.0 23.9 26.0 27.5 28.4 30.3 32.5 35.7 38.1 41.6
4 2sc4095 s-parameter a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s 20 30 40 50 00 60 70 80 90 100 110 120 130 140 150 - 160 - 150 - 140 - 130 - 120 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.02 0.48 0.01 0.49 0 0 0.49 0.01 0.48 0.02 0.47 0.03 0.46 0.04 0.45 0.05 0.44 0.06 0.43 0.07 0.42 0.08 0.41 0.09 0.40 0.10 0.39 0.11 0.38 0.12 0.37 0.13 0.36 0.14 0.35 0.15 0.34 0.16 0.33 0.17 0.32 0.18 0.31 0.19 0.30 0.20 0.29 0.21 0.28 0.22 0.27 0.23 0.26 0.24 0.25 0.25 0.24 0.26 0.23 0.27 w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w a r d g e n e r a t o r 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.0 ( +jx CCCC z o ) 0.2 0.4 0.6 0.8 1.0 0.8 0.7 0.6 0.3 0.2 0.1 0.2 1.0 0.8 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.4 0.5 5.0 10 50 3.0 4.0 1.8 2.0 1.2 1.0 0.9 1.4 1.6 reactance component ( r CCCC z o ) ne g a t ive r e a c t a n c e c om p o n e n t p os i t i v e r e a c t a n c e co m p o n e n t 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0 ( - jx CCCC z o ) 20 20 0.2 0.4 0.6 0.8 1.0 s 11e , s 22e -frequency s 21e -frequency 90 0 30 - 30 60 - 60 180 150 - 150 120 - 120 - 90 4 0 8 12 16 20 s 21e 2ghz 90 0 30 - 30 60 - 60 180 150 - 150 120 - 120 - 90 0.04 0 0.08 0.12 0.16 0.2 s 12e condition v ce = 6 v, i c = 10/3 ma, freq. = 0.2 to 2 ghz (step 200 mhz) condition v ce = 6 v i c = 10/3 ma freq. = 0.2 to 2 ghz (step 200 mhz) s 12e -frequency condition v ce = 6 v i c = 10/3 ma freq. = 0.2 to 2 ghz (step 200 mhz) 0.2 ghz 0.2 ghz 2 ghz 2 ghz i c = 3 ma i c = 3 ma i c = 10 ma i c = 10 ma i c = 3 ma i c = 3 ma s 11e s 22e i c = 10 ma i c = 10 ma 0.2 ghz 0.2 ghz 2ghz
5 2sc4095 recommended soldering condtitions the following conditions (see table below) must be met then soldering this product. please consult with our sales offices in case other soldering process is used, or in case soldering is done under different contions. types of surface mount device for more details, refer to our document smt manual (iei-1207). 2sc4095 soldering process soldering conditions symbol infrared ray reflow peak packages surface temperature: 230 c or below, reflow time: 30 seconds or below (210 c or higher), number of reflow process: 1, exposure limit*: none ir30-00-1 vps peak packages surface temperature: 215 c or below, reflow time: 40 seconds or below (200 c or higher), number of reflow process: 1, exposure limit*: none vp15-00-1 wave soldering solder temperature: 260 c or below, flow time: 10 seconds or below, number of reflow process: 1, exposure limit*: none ws60-00-1 partial heating method terminal temperature: 300 c or below, flow time: 3 seconds or below, exposure limit*: none *: exposure limit before soldering after dry-pack package is opened. storage conditions: 25 c and relative humidity at 65 % or less. note : do not apply more than a single process at once, except for partial heating method.
6 2sc4095 [memo]
7 2sc4095 [memo]
2sc4095 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96. 5
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